Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates

Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si „111) substrates

ROOM TEMPERATURE LASER ACTION IN LATERALLY OVERGROWN GaN PYRAMIDS ON (111) SILICON

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnificat...

GaN nanorods grown on Si (111) substrates and exciton localization

We have investigated exciton localization in binary GaN nanorods using micro- and time-resolved photoluminescence measurements. The temperature dependence of the photoluminescence has been measured, and several phonon replicas have been observed at the lower energy side of the exciton bound to basal stacking faults (I1). By analyzing the Huang-Rhys parameters as a function of temperature, deduc...

CoSi2 heteroepitaxy on patterned Si(100) substrates

The influence of starting surface topography on the nucleation and growth of epitaxial silicide layers was investigated. CoSi2 layers were grown via the template technique on one-dimensionally patterned Si~100! substrates. These substrates contained mesa stripes, running parallel to Si@011#, and exhibited either a number of Si $hkl% facets, or ‘‘smoothly varying’’ sinusoidal profiles. Conventio...

Optical Characterization of Lateral Epitaxial Overgrown GaN Layers

The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatiallyresolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measur...